TPC8051-H 반도체 회로 부품 판매점
MOSFETs
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 Toshiba Semiconductor |
TPC8051-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8051-H
Switching Regulator Applications
Motor Drive Applications
DC-DC Converter Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 16 nC (typ.)
• Low drain-source ON-resistance:
RDS (ON) = 6.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 45 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 80 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
80
80
±20
13
52
1.9
1.0
110
13
0.06
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1B
Weight: 0.085g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
1234
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-06-19
Thermal Characteristics
Characteristic
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Rth (ch-a)
Rth (ch-a)
Max
65.8
125
Unit
°C/W
°C/W
TPC8051-H
Marking (Note 5)
TPC8051
H
Part No.
(or abbreviation code)
Lot No.
Note
Note : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1 mH, RG = 25 Ω, IAR = 13 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
2 2009-06-19
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TPC8051-H mosfet
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