|
|
PDF NX3008CBKS Data sheet ( Hoja de datos )
| Número de pieza | NX3008CBKS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NX3008CBKS (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
|
No Preview Available !
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very
small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Level shifter
Power supply converter
Load switch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR2 (P-channel)
VDS drain-source voltage
VGS gate-source voltage
ID drain current
TR1 (N-channel)
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
-
-8
[1] -
-
-
-
-30
8
-200
V
V
mA
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
TR1 (N-channel), Static characteristics
-
-8
[1] -
-
-
-
30 V
8V
350 mA
RDSon
drain-source on-state VGS = 4.5 V; ID = 350 mA;
resistance
Tj = 25 °C
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state VGS = -4.5 V;
resistance
ID = -200 mA; Tj = 25 °C
- 1 1.4 Ω
- 2.8 4.1 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
1 page  
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
-10
lD
(A)
-1
001aao253
(1)
-10-1
(2)
-10-2
-10-1
-1
(3)
(4)
(5)
-10 -102
VDS (V)
Fig 4.
IDM is a single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad
Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per device
Rth(j-a)
thermal resistance from junction to ambient
TR1 (N-channel)
Rth(j-a)
thermal resistance from junction to ambient
Conditions
in free air
in free air
Rth(j-sp)
thermal resistance from junction to solder point
TR2 (P-channel)
Rth(j-a)
thermal resistance from junction to ambient in free air
Rth(j-sp)
thermal resistance from junction to solder point
Min Typ
[1] -
-
[1] -
[2] -
-
390
340
-
[1] -
[2] -
-
390
340
-
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Max Unit
300 K/W
445 K/W
390 K/W
130 K/W
445 K/W
390 K/W
130 K/W
NX3008CBKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 21
5 Page 
NXP Semiconductors
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
0.4
ID
(A)
0.3
001aao271
(1) (2)
2.0
a
1.5
1.0
001aao272
0.2
0.5
0.1
0.0
0123
VGS (V)
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 13. TR1: Transfer characteristics: drain current as
a function of gate-source voltage; typical
values
0.0
-60 0 60 120 180
Tj (˚C)
Fig 14. TR1: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
1.5
VGS(th)
(V)
1.0
0.5
001aao273
(1)
(2)
(3)
102
C
(pF)
10
001aao274
(1)
(2)
(3)
0.0
-60 0
60 120 180
Tj (˚C)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 15. TR1: Gate-source threshold voltage as a
function of junction temperature
1
10-1
1
10 102
VDS (V)
f = 1 MHz; VGS = 0 V
(1)Ciss
(2)Coss
(3)Crss
Fig 16. TR1: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
NX3008CBKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 July 2011
© NXP B.V. 2011. All rights reserved.
11 of 21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet NX3008CBKS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NX3008CBKS | MOSFET ( Transistor ) | NXP Semiconductors |
| NX3008CBKV | MOSFET ( Transistor ) | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |