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PDF NX2301P Data sheet ( Hoja de datos )
| Número de pieza | NX2301P | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
1.8 V RDSon rated for Low Voltage Gate Drive
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
VGS
ID
RDSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = −4.5 V
Tj = 25 °C;
VGS = −4.5 V;
ID = −1 A
- - −20 V
- - ±8 V
[1] - - −2 A
[2] - 100 120 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
[2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
1 page  
NXP Semiconductors
NX2301P
20 V, 2 A P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
10 0.02 0.01
0
017aaa096
1
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0 0.02
0.01
017aaa097
1
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX2301P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 October 2010
© NXP B.V. 2010. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 3 leads
NX2301P
20 V, 2 A P-channel Trench MOSFET
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1 0.48 0.15 3.0
0.38 0.09 2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
Fig 18. Package outline SOT23 (TO-236AB)
NX2301P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 October 2010
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2010. All rights reserved.
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