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PDF NX3020NAKV Data sheet ( Hoja de datos )
| Número de pieza | NX3020NAKV | |
| Descripción | dual N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - 30 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1] - - 200 mA
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C
resistance
- 2.7 4.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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1 page  
NXP Semiconductors
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
103 017aaa677
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102 0.2
0.25
0.1
0.05
0
10
10-3
0.02
0.01
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa678
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102 0.33
0.2
0.25
0.1
0.05
0
10
10-3
0.02
0.01
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
NX3020NAKV
All information provided in this document is subject to legal disclaimers.
Product data sheet
29 October 2013
Min Typ Max Unit
30 - - V
0.8 1.2 1.5 V
- - 1 µA
- - 10 µA
© NXP N.V. 2013. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
NX3020NAKV v.2
20131029
Product data sheet
-
Modifications:
• 3D package outline added
• Table 7 values of capacitance parameters corrected
• Figure 13 corrected
NX3020NAKV v.1
20120706
Product data sheet
-
Supersedes
NX3020NAKV v.1
-
NX3020NAKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
11 / 14
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet NX3020NAKV.PDF ] | |
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