파트넘버.co.kr WNM2025 데이터시트 PDF


WNM2025 반도체 회로 부품 판매점

N-Channel MOSFET



TY Semiconductor 로고
TY Semiconductor
WNM2025 데이터시트, 핀배열, 회로
VDS (V)
20
Rds(on) ()
0.027@ VGS=4.5V
0.031@ VGS=2.5V
0.036@ VGS=1.8V
Descriptions
The WNM2025 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2025 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-3L
Applications
Product specification
WNM2025
Single N-Channel, 20V, 3.9 A, Power MOSFET
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
3
W25*
12
W25= Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
Package
Shipping
WNM2025-3/TR SOT-23-3L 3000/Reel&Tape
http://www.twtysemi.com
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WNM2025 데이터시트, 핀배열, 회로
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
Product specification
WNM2025
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±8
3.9 3.6
3.1 2.9
0.8 0.7
0.5 0.4
3.6 3.3
2.8 2.6
0.7 0.6
0.4 0.3
15
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
120
132
145
158
60
Maximum
145
168
174
202
75
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
http://www.twtysemi.com
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WNM2025 mosfet

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