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NVD4813NH 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



ON Semiconductor 로고
ON Semiconductor
NVD4813NH 데이터시트, 핀배열, 회로
NTD4813NH, NVD4813NH
Power MOSFET
30 V, 40 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low RG
AECQ101 Qualified and PPAP Capable NVD4813NH
These Devices are PbFree and are RoHS Compliant
Applications
CPU Power Delivery
DCDC Converters
High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
9.0 A
TA = 85°C
7.0
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
1.94 W
7.6 A
5.9
1.27 W
40 A
31
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
35.3 W
90 A
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
TA = 25°C
IDmaxPkg
TJ,
TSTG
IS
dV/dt
35
55 to
+175
29
6
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 17.2 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
44.4 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 3
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
13 mW @ 10 V
25.9 mW @ 4.5 V
D
ID MAX
40 A
G
S
NCHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
4813NH = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD4813NH/D


NVD4813NH 데이터시트, 핀배열, 회로
NTD4813NH, NVD4813NH
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoTAB (Drain)
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – Steady State (Note 2)
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJCTAB
RqJA
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V to
11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Value
4.25
3.5
77.5
118.5
Unit
°C/W
Typ Max Unit
V
24.5 mV/°C
1
10
±100
mA
nA
5.4
10.9
10.7
20.9
18.5
6.7
2.5 V
mV/°C
13
25.9 mW
S
940
201 pF
115
7.1 10
1.6
nC
3.4
3.0
18.2 nC
10
19.5
10.3 ns
2.9
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NVD4813NH mosfet

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