7N20Z 반도체 회로 부품 판매점
7A 200V N-CHANNEL POWER MOSFET
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 UNISONIC TECHNOLOGIES |
UNISONIC TECHNOLOGIES CO., LTD
7N20Z
7A, 200V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UT C 7N20Z is an N-Chan nel en hancement mode po wer
MOSFET providing c ustomers with e xcellent s witching p erformance
and mi nimum on-state res istance. T his de vice can also withstand
high energy pulse in the avalanche and the commutation mode.
The UTC 7N20Z is gen erally applied in low voltage applications,
such as DC motor controls , audio amplifi ers and high efficiency
switching DC/DC converters.
FEATURES
* Low Gate Charge: 5.8nC (TYP.)
* Low CRSS: 10 pF (TYP.)
* RDS(ON) = 0.58Ω @VGS = 10 V
* Fast Switching
* Improved dv/dt Capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N20ZL-TN3-R
7N20ZG-TN3-R
7N20ZL-TN3-T
7N20ZG-TN3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R502-810.A
http://www.Datasheet4U.com
7N20Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER SYMBOL
RATINGS
UNIT
Drain -Source Voltage
Gate-Source Voltage
VDSS 200
VGSS ±25
V
V
Continuous Drain Current TC =25°C I
D7
A
Pulsed Drain Current (Note 2)
IDM 28
A
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
EAS 130
PD 2.5
mJ
W
Operating Junction Temperature
Storage Temperature
TJ 150
TSTG
-55 ~ +150
°C
°C
Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L =26mH, IAS =7A, VDD =25V, RG =25Ω Starting TJ =25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA 50
Note: When mounted on the minimum pad size recommended (PCB Mount)
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS V
IGSS V
VGS =0V, ID =250µA
DS =200V, VGS =0V
GS =±25V, VDS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID =250µA 2.0
VGS =10V, ID =3.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=100V, ID=7A
(Note 1,2)
VDD=50V, ID=7A, RG=25Ω
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD I S =7A, VGS =0V
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
200 V
1 µA
±10 µA
4.0 V
0.58 0.69 Ω
190 250 pF
60 75 pF
10 13 pF
5.8
1.4
2.5
7
24
13
19
7.5
25
60
35
50
nC
nC
nC
ns
ns
ns
ns
7A
28 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N20Z mosfet
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