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5N60Z 반도체 회로 부품 판매점

5A 600V N-CHANNEL POWER MOSFET



UNISONIC TECHNOLOGIES 로고
UNISONIC TECHNOLOGIES
5N60Z 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
5N60Z
Preliminary
5A, 600V N-CHANNEL
POWER MOSFET
„ DE SCRIPTION
The U TC 5N60Z is a high voltag e po wer MOSF ET and is
designed to h ave b etter cha racteristics, such as fast s witching
time, lo w gate charg e, lo w on-state resista nce a nd have a hi gh
rugged avalanche characteristics. This power MOSFET is usually
used at hig h spee d s witching ap plications in po wer s upplies,
PWM motor controls, hig h efficient DC to DC convert ers and
bridge circuits.
„ FEAT URES
* RDS(ON) = 2.2@VGS = 10 V
* Ultra Low Gate Charge ( Typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N60ZL-TF1-T
5N60ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-909.a
http://www.Datasheet4U.com


5N60Z 데이터시트, 핀배열, 회로
5N60Z
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 600
V
Gate-Source Voltage
VGSS ±20
V
Avalanche Current (Note 2)
IAR 5
A
Continuous Drain Current
ID 5
A
Pulsed Drain Current (Note 2)
IDM 20
A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS 210
EAR 10
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
PD 36
W
Junction Temperature
TJ + 150 °C
Operation Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.47
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-909.a




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5N60Z mosfet

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