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PDF RU190N08Q Data sheet ( Hoja de datos )

Número de pieza RU190N08Q
Descripción N-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



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RU190N08Q
N-Channel Advanced Power MOSFET
Features
· 80V/190A
RDS (ON)=3.9m(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-247
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300µs Pulsed Drain Current Tested
ID Continue Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance -Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
80
±25
175
-55 to 175
190
700
190
140
326
163
0.46
1225
Unit
V
°C
°C
A
A
W
°C/W
mJ
CopyrightRuichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
www.ruichips.com
http://www.Datasheet4U.com

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RU190N08Q pdf
Typical Characteristics
Drain-Source On Resistance
RU190N08Q
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
CopyrightRuichips Semiconductor Co., Ltd
Rev. D – NOV., 2012
5
QG - Gate Charge (nC)
www.ruichips.com

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