파트넘버.co.kr GKI06259 데이터시트 PDF


GKI06259 반도체 회로 부품 판매점

N Channel Trench Power MOSFET



SANKEN 로고
SANKEN
GKI06259 데이터시트, 핀배열, 회로
60 V, 22 A, 16.5 mΩ Low RDS(ON)
N ch Trench Power MOSFET
GKI06259
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
ID ---------------------------------------------------------- 22 A
RDS(ON) -------- 21.7 mΩ max. (VGS = 10 V, ID = 12.5 A)
Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Package
DFN 5 × 6
8pin
DDDD
8pin
DDDD
SSSG
1pin
GSSS
1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test conditions
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
VDS
VGS
TC = 25 °C,
ID
with infinite heatsink
TA = 25 °C,
mounted on PCB*
IDM
PW 100µs
Duty cycle 1 %
IS
ISM
PW 100µs
Duty cycle 1 %
VDD = 30 V, L = 1 mH,
EAS
IAS = 4.2 A, unclamped,
RG = 4.7 Ω,
Refer to Figure 1
IAS
TC = 25 °C,
PD
with infinite heatsink
TA = 25 °C,
mounted on PCB*
TJ
Storage Temperature Range
TSTG
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
S(1)(2)(3)
Rating
60
± 20
22
6
43
26
43
18
10
40
3.1
150
55 to 150
GKI06259-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
Unit
V
V
A
A
A
A
A
mJ
A
W
W
°C
°C
1


GKI06259 데이터시트, 핀배열, 회로
GKI06259
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test Conditions
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA Mounted on PCB*
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
Min. Typ. Max. Unit
− − 3.1 °C/W
− − 40.3 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Breakdown
Voltage
V(BR)DSS
Drain to Source Leakage Current
IDSS
Gate to Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain to Source
On-Resistance
RDS(ON)
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Total Gate Charge (VGS = 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
RG
Ciss
Coss
Crss
Qg1
Qg2
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 60 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 250 µA
ID = 12.5 A, VGS = 10 V
ID = 6.3 A, VGS = 4.5 V
f = 1 MHz
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDS = 30 V
ID = 15.8 A
VDD = 30 V
ID = 15.8 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
IS = 12.5 A, VGS = 0 V
IF = 15.8 A
di/dt = 100 A/µs
Refer to Figure 3
Min. Typ. Max. Unit
60 − − V
− − 100 µA
− − ± 100 nA
1.0 2.0 2.5
V
16.5 21.7
20.4 26.8
3.0
Ω
1050
125
pF
53
14.7
6.6
2.2
nC
2.1
1.9
2.3
10.9
ns
5.0
0.9 1.5 V
28.7
ns
32.3
nC
GKI06259-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
2




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GKI06259 mosfet

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GKI06259

N Channel Trench Power MOSFET - SANKEN