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Power MOSFET ( Transistor )



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SIHFP22N50A 데이터시트, 핀배열, 회로
IRFP22N50A, SiHFP22N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
120
32
52
Single
0.23
TO-247AC
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge Converters
• Power Factor Correction Boost
TO-247AC
IRFP22N50APbF
SiHFP22N50A-E3
IRFP22N50A
SiHFP22N50A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 4.87 mH, Rg = 25 , IAS = 22 A (see fig. 12).
c. ISD 22 A, dI/dt 190 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
22
14
88
2.2
1180
22
28
277
4.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91207
S11-0446-Rev. C, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Free Datasheet http://www.Datasheet4U.com


SIHFP22N50A 데이터시트, 핀배열, 회로
IRFP22N50A, SiHFP22N50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.45
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 13 Ab
VDS = 50 V, ID = 13 Ab
500 -
-V
- 0.55 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 0.23
12 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc
VGS = 10 V
ID = 22 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 250 V, ID = 22 A,
RG = 4.3 , RD = 11, see fig. 10b
-
-
-
-
-
-
-
-
-
-
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
3450
513
27
4935
137
264
-
-
-
26
94
47
47
-
-
-
120
32
52
-
-
-
-
pF
nC
ns
- 22
A
- 88
Body Diode Voltage
VSD
TJ = 25 °C, IS = 22A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 570 850 ns
TJ = 25 °C, IF = 22 A, dI/dt = 100 A/µsb
Qrr - 6.1 9.2 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91207
S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Free Datasheet http://www.Datasheet4U.com




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