SMK1360FD 반도체 회로 부품 판매점
Advanced N-Ch Power MOSFET
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 Kodenshi |
SMK1360FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
BVDDS=600V (Min.)
Low gate charge: Qg=41nC (Typ.)
Low drain-source On resistance: RDS(on)=0.65Ω (Max.)
100% avalanche tested
RoHS compliant device
Ordering Information
Part Number
Marking
Package
SMK1360FD
SMK1360
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AUAKUK
SGMFKΔY1YM3MD6DD0 D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) GFYMDD
-. G: Option Code (H: Halogen Free)
-. F: Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 28-JUL-11
KSD-T0O058-000
Rating
600
30
13
8.2
52
544
13
4.5
45
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
1 of 8
Free Datasheet http://www.Datasheet4U.com
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
Rth(j-c)
Rth(j-a)
SMK1360FD
Rating
Max. 2.77
Max. 62.5
Unit
C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance (Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time (Note 3, 4)
Rise time (Note 3, 4)
Turn-off delay time (Note 3, 4)
Fall time (Note 3, 4)
Total gate charge (Note 3, 4)
Gate-source charge (Note 3, 4)
Gate-drain charge (Note 3, 4)
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
ID=250uA, VGS=0
ID=250uA, VDS=VGS
VDS=500V, VGS=0V
VDS=600V, Tc=125C
VDS=0V, VGS=30V
VGS=10V, ID=6.5A
VDS=10V, ID=6.5A
VDS=25V, VGS=0V,
f=1.0MHz
VDD=300V, ID=13A,
RG=25Ω
VDS=480V, VGS=10V,
ID=13A
Min.
600
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
-4
-1
- 100
- 100
0.55 0.65
10 -
2162 2882
183 244
14.6 19.4
30 -
85 -
140 -
90 -
41 63
13 -
10.5 -
Unit
V
V
uA
uA
nA
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time (Note 3, 4)
Reverse recovery charge (Note 3, 4)
IS Integral reverse diode
ISM in the MOSFET
VSD VGS=0V, IS=13A
trr IS=13A, VGS=0V
Qrr dIS/dt=-100A/us
- - 13
- - 52
- - 1.4
- 510 -
- 4.3 -
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=5.9mH, IAS=13A, VDD=50V, RG=25, Starting TJ=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Unit
A
A
V
ns
uC
Rev. date: 28-JUL-11
KSD-T0O058-000
www.auk.co.kr
2 of 8
Free Datasheet http://www.Datasheet4U.com
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SMK1360FD mosfet
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