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IRF1503SPBF 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRF1503SPBF 데이터시트, 핀배열, 회로
PD - 95432A
IRF1503SPbF
Typical Applications
l Industrial Motor Drive
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
IRF1503LPbF
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 3.3m
S ID = 75A
Description
This Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
D2Pak
TO-262
IRF1503SPbF IRF1503LPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Single Pulse Avalanche Energy Tested Value†
Avalanche Current
Repetitive Avalanche Energy…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
190
130
75
960
200
1.3
± 20
510
980
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.irf.com
1
07/14/10
Free Datasheet http://www.Datasheet4U.com


IRF1503SPBF 데이터시트, 핀배열, 회로
IRF1503S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max.
30 ––– –––
––– 0.028 –––
––– 2.6 3.3
2.0 ––– 4.0
75 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 130 200
––– 36 54
––– 41 62
––– 17 –––
––– 130 –––
––– 59 –––
––– 48 –––
––– 5.0 –––
––– 13 –––
––– 5730 –––
––– 2250 –––
––– 290 –––
––– 7580 –––
––– 2290 –––
––– 3420 –––
Units
V
V/°C
m
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 140A „
VDS = 10V, ID = 250µA
VDS = 25V, ID = 140A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 140A
VDS = 24V
VGS = 10V„
VDD = 15V
ID = 140A
RG = 2.5
VGS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.049mH
RG = 25, IAS = 140A. (See Figure 12).
ƒ ISD 140A, di/dt 110A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
2
Min. Typ. Max. Units
Conditions
––– ––– 190†
––– ––– 960
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3
––– 71 110
V TJ = 25°C, IS = 140A, VGS = 0V „
ns TJ = 25°C, IF = 140A
––– 110 170 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
www.irf.com
Free Datasheet http://www.Datasheet4U.com




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IRF1503SPBF mosfet

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