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IRF7665S2TRPbF 반도체 회로 부품 판매점

DIGITAL AUDIO MOSFET



IRF 로고
IRF
IRF7665S2TRPbF 데이터시트, 핀배열, 회로
DIGITAL AUDIO MOSFET
PD - 96239
IRF7665S2TRPbF
IRF7665S2TR1PbF
Features
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 100W per channel into 8with no heatsink Š
Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
· Lead-Free (Qualified up to 260°C Reflow)
· Industrial Qualified
Key Parameters
VDS 100
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) typ.
51
8.3
3.5
V
m:
nC
SB DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SB SC
M2 M4
L4 L6 L8
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF7665S2TR/TR1PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower
parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im-
proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red
or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and
processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving
thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
TJ
TSTG
Maximum Power Dissipation
jPower Dissipation
jPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
Parameter
eJunction-to-Ambient
hJunction-to-Ambient
iJunction-to-Ambient
jkJunction-to-Can
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Max.
100
± 20
14.4
10.2
4.1
58
30
15
2.4
0.2
-55 to + 175
Typ.
–––
12.5
20
–––
1.4
Max.
63
–––
–––
5.0
–––
Units
V
A
W
W/°C
°C
Units
°C/W
1
07/02/09
http://www.Datasheet4U.com


IRF7665S2TRPbF 데이터시트, 핀배열, 회로
IRF7665S2TR/TR1PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
VGS(th)
Gate Threshold Voltage
3.0
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
RG(int)
Internal Gate Resistance
–––
Typ.
–––
0.10
51
4.0
–––
–––
–––
–––
3.5
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
gfs Forward Transconductance
8.8 –––
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 8.3
––– 1.9
––– 0.77
––– 3.2
––– 2.4
––– 4.0
––– 3.8
––– 6.4
––– 7.1
––– 3.6
––– 515
––– 112
––– 30
––– 533
––– 67
––– 115
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
Typ.
–––
––– –––
––– –––
––– 33
––– 38
Max.
–––
–––
62
5.0
20
250
100
-100
5.0
Units
V
V/°C
m
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
fVGS = 10V, ID = 8.9A
VDS = VGS, ID = 25µA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max.
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
nC
Conditions
VDS = 25V, ID = 8.9A
VDS = 50V
VGS = 10V
ID = 8.9A
See Fig. 6 and 17
VDD = 50V
ID = 8.9A
fns RG = 6.8
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
gVGS = 0V, VDS = 0V to 80V
Typ.
–––
–––
Max.
37
8.9
Units
mJ
A
Max.
14.4
58
1.3
–––
–––
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
fTJ = 25°C, IS = 8.9A, VGS = 0V
TJ = 25°C, IF = 8.9A, VDD = 25V
fdi/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.944mH, RG = 25, IAS = 8.9A.
ƒ Surface mounted on 1 in. square Cu board.
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
2
† Used double sided cooling , mounting pad.
‡ Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
ˆ TC measured with thermal couple mounted to top
(Drain) of part.
‰ Rθ is measured at TJ of approximately 90°C.
Š Based on testing done using a typical device & evaluation board
at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case
temperature TC is 55°C.
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http://www.Datasheet4U.com




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IRF7665S2TRPbF

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Digital Audio MOSFET - International Rectifier