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PDF IRF6785MTRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6785MTRPbF | |
| Descripción | DIGITAL AUDIO MOSFET | |
| Fabricantes | IRF | |
| Logotipo |  |
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PD - 97282
IRF6785MTRPbFDIGITAL AUDIO MOSFET
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 250W per channel into 8Ω Load in
Half-Bridge Configuration Amplifier
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Key Parameters
VDS 200
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) max
85
26
3.0
V
m:
nC
MZ
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Maximum Power Dissipation
ePower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy
ÃAvalanche Current
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
ekJunction-to-Ambient
hkJunction-to-Ambient
ikJunction-to-Ambient
jkJunction-to-Case
Junction-to-PCB Mounted
Notes through are on page 2
www.irf.com
Max.
200
± 20
19
3.4
2.7
27
57
2.8
1.8
33
8.4
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.4
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
1
04/18/07
http://www.Datasheet4U.com
1 page  
500
ID = 4.2A
400
300
200 TJ = 125°C
100
TJ = 25°C
0
4 6 8 10 12 14
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
16
IRF6785MTRPbF
200
175 TJ = 125°C
150
125
100 TJ = 25°C
75
Vgs = 10V
50
0
5 10 15
ID, Drain Current (A)
20
Fig 13. On-Resistance vs. Drain Current
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 15a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 15b. Unclamped Inductive Waveforms
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 16a. Switching Time Test Circuit
www.irf.com
150
ID
125
TOP
0.85A
1.04A
BOTTOM 8.4A
100
75
50
25
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 16b. Switching Time Waveforms
5
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