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IRF |
DIGITAL AUDIO MOSFET
IRF6775MTRPbF
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 250W per channel into 4Ω Load in
Key Parameters
VDS 150
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) max.
47
25.0
3.0
V
m:
nC
Half-Bridge Configuration Amplifier
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
&)
5
&
5
MZ
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6775MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
ePower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy
ÃAvalanche Current
eLinear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
ekJunction-to-Ambient
hkJunction-to-Ambient
ikJunction-to-Ambient
jkJunction-to-Case
Junction-to-PCB Mounted
Notes through are on page 2
Max.
150
± 20
28
4.9
3.9
39
89
2.8
1.8
33
5.6
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.4
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 26, 2014
http://www.Datasheet4U.com
IRF6775MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
VGS(th)
Gate Threshold Voltage
3.0
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
RG(int)
Internal Gate Resistance
–––
Typ.
–––
0.17
47
–––
–––
–––
–––
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
gfs Forward Transconductance
11 –––
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 25
––– 5.8
––– 1.4
––– 6.6
––– 11
––– 8.0
––– 5.9
––– 7.8
––– 5.8
––– 15
––– 1411
––– 193
––– 40
––– 1557
––– 93
––– 175
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÃISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
Typ.
–––
––– –––
––– –––
––– 62
––– 164
Max.
–––
–––
56
5.0
20
250
100
-100
3.0
Units
V
V/°C
mΩ
V
μA
nA
Ω
Conditions
VGS = 0V, ID = 250μA
fReference to 25°C, ID = 1mA
VGS = 10V, ID = 5.6A
VDS = VGS, ID = 100μA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max.
–––
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
nC
Conditions
VDS = 50V, ID = 5.6A
VDS = 75V
VGS = 10V
ID = 5.6A
See Fig. 6 and 17
VDD = 75V
ID = 5.6A
fns RG = 6.0Ω
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
gVGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Max.
28
39
1.3
–––
–––
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
fTJ = 25°C, IS = 5.6A, VGS = 0V
fTJ = 25°C, IF = 5.6A, VDD = 25V
di/dt = 100A/μs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.53mH, RG = 25Ω, IAS = 11.2A.
Surface mounted on 1 in. square Cu board.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top
(Drain) of part.
Rθ is measured at TJ of approximately 90°C.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 26, 2014
http://www.Datasheet4U.com
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