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IRF |
DIGITAL AUDIO MOSFET
IRF6643TRPbF
Features
• Latest MOSFET silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 200 W per channel into 8Ω load in half-bridge
configuration amplifier
• Dual sided cooling compatible
• Compatible with existing surface mount technologies
• RoHS compliant, halogen-free
• Lead-free (qualified up to 260°C reflow)
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
Key Parameters
VDS
RDS(ON) typ. @ VGS = 10V
Qg typ.
150
29
39
RG(int) typ.
0.9
V
mΩ
nC
Ω
MZ DirectFET® ISOMETRIC
SH SJ ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
IRF6643TRPbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6643TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
PD @TA = 25°C
PD @TA = 70°C
EAS
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
IAR Avalanche Current
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1 www.irf.com © 2013 International Rectifier
Max.
±20
35
6.2
5.0
76
89
2.8
1.8
50
7.6
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
May 31, 2013
http://www.Datasheet4U.com
IRF6643TRPbF
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance
16
Qg
Qgs1
Qgs2
Qgd
Qgodr
Total Gate Charge
Pre-VthGate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
–––
–––
–––
–––
–––
Qsw Switch Charge (Qgs2 + Qgd)
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
Coss Output Capacitance
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Typ.
–––
0.18
29
4.0
-11
–––
–––
–––
–––
0.8
Max.
–––
–––
34.5
4.9
–––
20
250
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
mΩ VGS = 10V, ID = 7.6A
V VDS = VGS, ID = 150µA
mV/°C
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ=125°C
nA VGS = 20V
VGS = -20V
Ω
–––
39
9.6
2.2
11
16
13
9.2
5.0
13
4.4
2340
300
61
1950
140
–––
55
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 10V, ID = 7.6A
VDS = 75V
VGS = 10V
nC ID = 7.6A
ns VDD = 75V, VGS = 10V
ID = 7.6A
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS=0V, VDS=1.0V, ƒ=1.0MHz
VGS=0V, VDS=80V, ƒ=1.0MHz
Typ.
–––
–––
–––
67
190
Max.
58
76
1.3
100
280
Units
Conditions
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 7.6A, VGS = 0V
ns TJ = 25°C, IF = 7.6A,VDD = 50V
nC di/dt = 100A/µs
2 www.irf.com © 2013 International Rectifier
May 31, 2013
http://www.Datasheet4U.com
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