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IRF1010 반도체 회로 부품 판매점

N-Channel Power MOSFET / Transistor



nELL 로고
nELL
IRF1010 데이터시트, 핀배열, 회로
SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(84A, 60Volts)
The Nell IRF1010 is a three-terminal silicon
device with current conduction capability
of 84A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
FEATURES
RDS(ON) = 8.5mΩ @ VGS = 10V
Ultra low gate charge(86nC max.)
Low reverse transfer capacitance
(CRSS = 200pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
GDS
TO-220AB
(IRF1010A)
D
G
D
S
TO-263(D2PAK)
(IRF1010H)
D (Drain)
PRODUCT SUMMARY
ID (A)
ID (A), Package Limited
VDSS (V)
RDS(ON) (mΩ)
QG(nC) max.
84
75
60
8.5 @ VGS = 10V
86
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
UNIT
VDSS
VDGR
VGS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
TJ=25°C to 150°C
RGS=20KΩ
60
60 V
±20
ID Continuous Drain Current (Note 1)
IDM Pulsed Drain current(Note 2)
VGS=10V, TC=25°C
VGS=10V, TC=100°C
84
60
A
340
IAR
EAR
EAS
dv/dt
Avalanche current(Note 2)
Repetitive avalanche energy(Note 2)
Single pulse avalanche energy(Note 3)
Peak diode recovery dv/dt(Note 4)
See fig.12,16,17
L=0.077mH, IAS=51A
51
mJ
99
5 V /ns
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
140
0.90
W
W /°C
TJ Operation junction temperature
-55 to 175
TSTG
Storage temperature
-55 to 175
ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
300
Mounting torque, #6-32 or M3 screw
10 (1.1)
Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2.Repetitive rating: pulse width limited by junction temperature.
3.L=0.077mH, IAS51A, RG=25, starting TJ=25˚C
4.ISD ≤ 51A, di/dt ≤ 260A/µs, VDD V(BR)DSS, TJ ≤ 175°C.
www.nellsemi.com
Page 1 of 7
lbf.in (N.m)


IRF1010 데이터시트, 핀배열, 회로
SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
Min.
Typ.
0.50
Max.
1.11
62
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)DSS
Drain to source breakdown voltage
VGS = 0V, ID = 250µA
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, referenced to 25°C
IDSS
Drain to source leakage current
VDS=60V, VGS=0V
VDS=48V, VGS=0V
TC = 25°C
TC=150°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance VGS = 10V, lD = 51A (Note 1)
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
gfS Forward transconductance
VDS=25V, ID=51A
CISS
Input capacitance
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 30V, ID = 51A,RG = 7.95Ω,
VGS = 10V(Note 1)
tf Fall time
LD Internal drain inductance
LS Internal source inductance
Between lead, 6mm from
package and center of die
QG Total gate charge
QGS
Gate to source charge
VDS = 48V, VGS = 10V, ID = 51A
QGD
Gate to drain charge (Miller charge)
Min.
60
2
200
Typ.
0.058
6.8
2810
420
200
19
90
38
54
4.5
7.5
58
19
21
Max. UNIT
V
V/ºC
20
μA
250
200
-200
nA
8.5 mΩ
4V
S
pF
ns
nH
86
28 nC
32
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 51A, VGS = 0V
1.3 V
Is(IsD)
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
84
ISM Pulsed source current
trr Reverse recovery time
Qrr Reverse recovery charge
tON Forward turn-on time
Note: 1. Pulse test: Pulse width ≤ 1.0ms, duty cycle ≤ 2%
G
(Gate)
340 A
S (Source)
ISD = 51A, VGS = 0V, VDD=30V
dIF/dt = 100A/µs (Note1)
41 62 ns
54 81 nC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
www.nellsemi.com
Page 2 of 7




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IRF1010 mosfet

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