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IRF6633PBF 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRF6633PBF 데이터시트, 핀배열, 회로
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97083
IRF6633PbF
IRF6633TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 4.1m@ 10V 7.0m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 4.0nC 1.2nC 32nC 8.8nC 1.8V
MP
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6633PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
20 V
±20
16
13 A
59
132
41 mJ
13 A
20 12
15
ID = 16A
10 ID= 13A
VDS= 16V
VDS= 10V
8
10
TJ = 125°C
5
0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
4
2
0
0 4 8 12 16 20 24
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.51mH, RG = 25, IAS = 13A.
1
5/3/06
Free Datasheet http://www.Datasheet4U.com


IRF6633PBF 데이터시트, 핀배열, 회로
IRF6633PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.4
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
35
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current
@TC=25°C (Body Diode)
ISM Pulsed Source Current
(Body Diode) g
–––
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
16
4.1
7.0
1.8
-5.2
–––
–––
–––
–––
–––
11
3.3
1.2
4.0
2.5
5.2
8.8
1.5
9.7
31
12
4.3
1250
630
200
Typ.
–––
–––
0.8
18
32
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
5.6 mVGS = 10V, ID = 16A i
9.4 VGS = 4.5V, ID = 13A i
2.2 V VDS = VGS, ID = 250µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 13A
17
––– VDS = 10V
––– nC VGS = 4.5V
––– ID = 13A
––– See Fig. 15
–––
––– nC VDS = 10V, VGS = 0V
–––
––– VDD = 16V, VGS = 4.5V i
––– ID = 13A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 10V
––– ƒ = 1.0MHz
Max. Units
Conditions
53 MOSFET symbol
A showing the
132 integral reverse
p-n junction diode.
1.0 V TJ = 25°C, IS = 13A, VGS = 0V i
27 ns TJ = 25°C, IF = 13A
48 nC di/dt = 500A/µs i
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
2 www.irf.com
Free Datasheet http://www.Datasheet4U.com




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