파트넘버.co.kr IRF6616TRPBF 데이터시트 PDF


IRF6616TRPBF 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRF6616TRPBF 데이터시트, 핀배열, 회로
l RoHS compliant containing no lead or bormide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l Lead-Free
PD - 96100
IRF6616PbF
IRF6616TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max ±20V max 3.7m@ 10V 4.6m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
29nC 9.4nC 2.4nC 33nC 15nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MX
MP
DirectFET™ ISOMETRIC
Description
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
40
±20
19
15
106
150
36
15
Units
V
A
mJ
A
12
10 ID = 19A
8.0 TJ = 125°C
6.0
4.0
2.0
0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
5 ID= 15A VDS = 32V
4 VDS= 20V
3
2
1
0
0 10 20 30
QG Total Gate Charge (nC)
40
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.32mH, RG = 25, IAS =15A.
1
05/23/07
Free Datasheet http://www.Datasheet4U.com


IRF6616TRPBF 데이터시트, 핀배열, 회로
IRF6616PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
75
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
37
3.7
4.6
1.8
-5.5
–––
–––
–––
–––
–––
29
8.6
2.4
9.4
8.6
12
15
1.3
15
19
21
4.4
3765
560
285
Typ.
–––
–––
0.8
15
33
Max.
–––
–––
5.0
6.2
2.25
–––
1.0
150
100
-100
–––
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
™mVGS = 10V, ID = 19A
™VGS = 4.5V, ID = 15A
V VDS = VGS, ID = 250µA
mV/°C
µA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 20V, ID = 15A
VDS = 20V
nC VGS = 4.5V
ID = 15A
See Fig. 15
nC VDS = 16V, VGS = 0V
Ù
VDD = 16V, VGS = 4.5V
ID = 15A
ns Clamped Inductive Load
VGS = 0V
pF VDS = 20V
ƒ = 1.0MHz
Max.
110
150
1.0
23
50
Units
Conditions
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
™V TJ = 25°C, IS = 15A, VGS = 0V
™ns TJ = 25°C, IF = 15A
nC di/dt = 500A/µs
Notes:
 Pulse width 400µs; duty cycle 2%.
‚ Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
Free Datasheet http://www.Datasheet4U.com




PDF 파일 내의 페이지 : 총 10 페이지

제조업체: International Rectifier

( ir )

IRF6616TRPBF mosfet

데이터시트 다운로드
:

[ IRF6616TRPBF.PDF ]

[ IRF6616TRPBF 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


IRF6616TRPBF

Power MOSFET ( Transistor ) - International Rectifier