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PDF 9918H Data sheet ( Hoja de datos )
| Número de pieza | 9918H | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9918H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Low drive current
▼ Surface mount package
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
14mΩ
45A
G DS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=125℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
20
± 12
45
20
140
48
0.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
2.6
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200227032
Free Datasheet http://www.datasheetlist.com/
1 page  
AP9918H/J
12
I D =18A
10
8
V DS =10V
V DS =15V
V DS =20V
6
4
2
0
0 5 10 15 20 25 30 35
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10000 f=1.0MHz
1000
Ciss
Coss
100 Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0 50 100
Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Free Datasheet http://www.datasheetlist.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 9918H.PDF ] | |
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