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Silicon Standard |
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Surface mount package
Description
G
D
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SSM9918H,J
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
BV DSS
R DS(ON)
ID
20V
14mΩ
45A
G DS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=125℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
20
± 12
45
20
140
48
0.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
2.6
110
Unit
℃/W
℃/W
Rev.2.01 6/26/2003
www.SiliconStandard.com
1 of 6
Free Datasheet http://www.datasheetlist.com/
SSM9918H,J
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
20 -
- 0.1
-V
- V/℃
RDS(ON)
Static Drain-Source On-Resistance VGS=4.5V, ID=18A
- - 14 mΩ
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=2.5V, ID=9A
VDS=VGS, ID=250uA
VDS=10V, ID=18A
VDS=20V, VGS=0V
VDS=20V ,VGS=0V
VGS= ± 12V
ID=18A
VDS=20V
VGS=5V
VDS=10V
ID=18A
RG=3.3Ω,VGS=5V
RD=0.56Ω
VGS=0V
VDS=20V
f=1.0MHz
- - 28 mΩ
0.5 - 1.2 V
- 26 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 19 - nC
- 1.5 - nC
- 10.5 - nC
- 7.5 - ns
- 83 - ns
- 18 - ns
- 23 - ns
- 500 - pF
- 310 - pF
- 125 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25℃, IS=45A, VGS=0V
Min. Typ. Max. Units
- - 45 A
- - 140 A
- - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Rev.2.01 6/26/2003
www.SiliconStandard.com
2 of 6
Free Datasheet http://www.datasheetlist.com/
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