HF10N60 반도체 회로 부품 판매점
N-Channel MOSFET
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 ETC |
Features
■ RDS(on) (Max 0.85 Ω )@VGS=10V
■ Gate Charge (Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
■
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
HF10N60
N-Channel MOSFET
Symbol
1. Gate
2. Drain
●
◀▲
●
●
3. Source
TO-220F
123
Absolute Maximum Ratings
(* Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
620
10
5
30
±30
420
14.7
4.5
60
0.38
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.6
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
PDF 文件使用 "pdfFactory" 试用版本创建 www.fineprint.cn
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HF10N60
Electrical Characteristics
( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ
coefficient
IDSS Drain-Source Leakage Current
Gate-Source Leakage, Forward
IGSS
Gate-source Leakage, Reverse
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 5A
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =10A, RG =25Ω
(Note 4, 5)
VDS =480V, VGS =10V, ID =10A
(Note 4, 5)
Min
620
-
-
-
-
-
2.2
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
0.6 - V/°C
-1
uA
- 100 uA
- 100 nA
- -100 nA
- 3.8
0.85 1.0
V
Ω
1100
110
12
1500
150
16
pF
15 40
30 70
110 230
40 90
28 37
5-
11 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =10A, VGS =0V
IS=10A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 12mH, IAS =10A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
365
3.4
Max.
10
30
1.4
-
-
Unit.
A
V
ns
uC
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HF10N60 mosfet
데이터시트 다운로드 :
[ HF10N60.PDF ]
[ HF10N60 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
