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PDF STB75N15 Data sheet ( Hoja de datos )
| Número de pieza | STB75N15 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP75N15
STW75N15 - STB75N15
N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247
LOW GATE CHARGE STripFET™ MOSFET
TARGET SPECIFICATION
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
Pw
STP75N15
STB75N15T4
STW75N15
150 V
150 V
150 V
< 0.023 Ω
< 0.023 Ω
< 0.023 Ω
75 A
75 A
75 A
300 W
300 W
350 W
s TYPICAL RDS(on) = 20 mΩ
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
s EXCELLENT FIGURE OF MERIT (RDS*Qg)
s 100% AVALANCHE TESTED
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters.
Figure 1: Package
3
2
1
TO-220
3
2
1
TO-247
3
1
D²PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UPS
Table 2: Order Codes
SALES TYPE
STP75N15
STB75N15T4
STW75N15
MARKING
P75N15
B75N15
W75N15
PACKAGE
TO-220
D²PAK
TO-247
PACKAGING
TUBE
TAPE & REEL
TUBE
Rev. 1
November 2004
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1/10
Free Datasheet http://www.datasheet4u.com/
1 page  
STP75N15 - STB75N15 - STW75N15
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
5/10
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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| PDF Descargar | [ Datasheet STB75N15.PDF ] | |
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