PDF FQD5N60C Data sheet ( Hoja de datos )

Número de pieza	FQD5N60C
Descripción	600V N-Channel MOSFET
Fabricantes	Fairchild Semiconductor
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No Preview Available ! FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω March 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant D D! G S D-PAK FQD Series GDS I-PAK FQU Series G! ● ◀▲ ● ● ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD5N60C / FQU5N60C 600 2.8 1.8 11.2 ± 30 210 2.8 4.9 4.5 2.5 49 0.39 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient* RθJA Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Fairchild Semiconductor Corporation FQD5N60C / FQU5N60C Rev. C0 Typ Max Unit - 2.56 °C/W - 50 °C/W - 110 °C/W www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ 1 page Gate Charge Test Circuit & Waveform Same Type 50KΩ as DUT 12V 200nF 300nF VGS 10V Qg VGS VDS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms 10V VDS VGS RG RL VDD DUT VDS 90% VGS 10% td(on) tr t on td(off) tf t off 10V tp Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG L EAS = --1-- 2 L IAS2 BVDSS -------------------- BVDSS - VDD BVDSS IAS VDD ID (t) DUT VDD VDS (t) t p Time ©2003 Fairchild Semiconductor Corporation FQD5N60C / FQU5N60C Rev. C0 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ 5 Page

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Número de pieza	Descripción	Fabricantes
FQD5N60C	600V N-Channel MOSFET	Fairchild Semiconductor

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