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UD6016 반도체 회로 부품 판매점

N-Ch 60V Fast Switching MOSFETs



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UD6016 데이터시트, 핀배열, 회로
UD6016
N-Ch 60V Fast Switching MOSFETs
General Description
The UD6016 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD6016 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
60V
RDS(ON)
12m
ID
47A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO252 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating
60
±20
47
30
9.2
7.5
100
123
38
52
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
Max.
62
2.4
Unit
/W
/W
1
Free Datasheet http://www.datasheet4u.com/


UD6016 데이터시트, 핀배열, 회로
UD6016
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=48V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=48V , VGS=4.5V , ID=15A
VDD=30V , VGS=10V , RG=3.3Ω,
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
60
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.052
10
12
---
-5.76
---
---
---
42
1.5
28.7
10.5
9.9
10.4
9.2
63
4.8
3240
210
146
Max.
---
---
12
15
2.5
---
1
5
±100
---
3
40.2
14.7
14.0
20.8
16.6
126
9.6
4536
294
204
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=30A
Min.
77
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=A , TJ=25
---
---
---
trr Reverse Recovery Time
---
Qrr Reverse Recovery Charge
IF=15A , dI/dt=100A/µs , TJ=25---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
18
14
Max.
47
100
1.2
---
---
Unit
A
A
V
nS
nC
2
Free Datasheet http://www.datasheet4u.com/




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