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PDF KU024N06P Data sheet ( Hoja de datos )
| Número de pieza | KU024N06P | |
| Descripción | N-ch Trench MOS FET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
VDSS= 60V, ID= 200A
Drain-Source ON Resistance :
RDS(ON)=2.4m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60 V
20 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
200*
126
504*
1,500
20
4.5
192
1.54
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 ~ 150
Thermal Resistance, Junction-to-Case RthJC
0.65
/W
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
/W
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
K
PIN CONNECTION
KU024N06P
N-ch Trench MOS FET
2012. 5. 14
Revision No : 0
1/7
Free Datasheet http://www.datasheet4u.com/
1 page  
KU024N06P
2012. 5. 14
Revision No : 0
5/7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KU024N06P.PDF ] | |
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