|
|
Número de pieza | SQ2308ES | |
Descripción | Automotive N-Channel MOSFET | |
Fabricantes | VISHAY | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SQ2308ES (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SQ2308ES
Vishay Siliconix
Automotive
N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-236
(SOT-23)
60
0.155
0.205
2.3
Single
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualifiedc
• Find out more about Vishay’s Automotive
Grade Product Requirements at:
www.vishay.com/applications
G1
S2
3D
G
Top View
SQ2308ES (8J)*
* Marking Code
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
SOT-23
SQ2308ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
60
± 20
2.3
1.4
2.5
9
11
6
2
0.6
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
175
75
UNIT
°C/W
Document Number: 65353
S10-2109-Rev. B, 27-Sep-10
www.vishay.com
1
This datasheet has been downloaded from http://www.digchip.com at thisFrpeeaDgaetasheet http://www.datasheet4u.com/
1 page SQ2308ES
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
2
1
Duty Cycle = 0.5
1 100 μs
1 ms
0.1 TC = 25 °C Limited by RDS(on)*
Single Pulse
BVDSS Limited
10 ms
100 ms
1 s,10 s, DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 175 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
Document Number: 65353
S10-2109-Rev. B, 27-Sep-10
www.vishay.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SQ2308ES.PDF ] |
Número de pieza | Descripción | Fabricantes |
SQ2308ES | Automotive N-Channel MOSFET | VISHAY |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |