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Kexin |
SMD Type
Dual P-Channel 2.5-V (G-S) MOSFET
KI5903DC
Features
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA = 25
Continuous Drain Current (TJ = 150 ) *
TA = 85
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
TA = 25
TA = 85
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady-State
Steady-State
* Surface Mounted on 1" X 1' FR4 Board.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Symbol
RthJA
RthJF
5 secs Steady State
-20
12
2.9 2.1
2.1 1.5
10
-1.8 -0.9
2.1 1.1
1.1 0.6
-55 to 150
260
Typ Max
50 60
90 110
30 40
Unit
V
A
W
Unit
/W
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/
SMD Type
ICIC
KI5903DC
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current*
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Symbol
Testconditons
VGS(th) VDS = VGS, ID = -250 A
IGSS VDS = 0 V, VGS = 12 V
VDS = -16V, VGS = 0 V
IDSS
VDS = -16V, VGS = 0 V, TJ = 85
ID(on) VDS - 5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -2.1A
rDS(on) VGS = -3.6 V, ID = -2.0A
VGS = -2.5 V, ID = -1.7A
gfs VDS = -10 V, ID = -2.1A
VSD IS = -0.9 A, VGS = 0 V
Qg
Qgs VDS = -10V, VGS = -4.5 V, ID = -2.1 A
Qgd
td(on)
tr VDD = -10 V, RL = 10
td(off) ID = -1 A, VGEN = -4.5V, RG = 6
tf
trr IF = -0.9 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
Min Typ Max Unit
-0.6 V
100 nA
-1 A
-5 A
-10 A
0.130 0.155
0.150 0.180
0.215 0.260
5S
-0.8 -1.2
V
3 6 nC
0.9 nC
0.6 nC
13 20 ns
35 55 ns
25 40 ns
25 40 ns
40 80 ns
2 www.kexin.com.cn
Free Datasheet http://www.datasheet4u.com/
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