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Unisonic Technologies |
UNISONIC TECHNOLOGIES CO., LTD
UT23P09
Preliminary
-23A, -100V P-CHANNEL
POWER MOSFET
POWER MOSFET
DESCRIPTION
The UTC UT23P09 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UT23P09 is suitable for all commercial-industrial
applications, etc.
FEATURES
* RDS(ON)<0.117Ω @ VGS=-10V, ID=-11A
* High Switching Speed
* Dynamic dv/dt Rating
SYMBOL
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ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT23P09L-TA3-T
UT23P09G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-844.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
UT23P09
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
-100
±20
V
V
Drain Current
Continuous
VGS=-10V, TC=25°C
VGS=-10V, TC=100°C
Pulsed (Note 2)
ID
IDM
-23 A
-16 A
-76 A
Avalanche Current (Note 2)
IAR -11 A
Avalanche Energy
Single Pulse (Note 3)
Repetitive (Note 2)
EAS
EAR
430 mJ
14 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0 V/ns
Power Dissipation (TC=25°C)
Linear Derating Factor
PD
140 W
0.91 W/°C
Junction Temperature
Storage Temperature Range
TJ
TSTG
-55~+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.Repetitive rating; pulse width limited by max. junction temperature.
3.Starting TJ=25°C, L=7.1mH, RG=25Ω, IAS=-11A.
4.ISD≤-11A, di/dt≤-470A/µs, VDD≤BVDSS, TJ≤150°C.
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62
1.1
UNIT
°C/W
°C/W
www.DataSheet.net/
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-844.a
Datasheet pdf - http://www.DataSheet4U.co.kr/
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