파트넘버.co.kr RD07MVS1B 데이터시트 PDF


RD07MVS1B 반도체 회로 부품 판매점

Silicon MOSFET Power Transistor



Mitsubishi Electric Semiconductor 로고
Mitsubishi Electric Semiconductor
RD07MVS1B 데이터시트, 핀배열, 회로
< Silicon RF Power MOS FET (Discrete) >
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
OUTLINE DRAWING
RD07MVS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
6.0+/-0.15
amplifiers applications.
RD07MVS1B improved a drain surge than
RD07MVS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>7W, Gp>10dB
@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
INDEX MARK
(Gate)
www.DataSheet.net/
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1B-101, T112 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct.2011
1
Datasheet pdf - http://www.DataSheet4U.co.kr/


RD07MVS1B 데이터시트, 핀배열, 회로
< Silicon RF Power MOS FET (Discrete) >
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage
Vgs=0V
VGSS Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input Power
Zg=Zl=50
ID Drain Current
-
Tch Junction Temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
Note: Above parameters are guaranteed independently.
RATINGS
30
+/- 20
50
1.5
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
IDSS Drain cutoff current
CONDITIONS
www.DataSheet.net/
VDS=17V, VGS=0V
LIMITS
MIN TYP MAX.
- - 200
IGSS Gate cutoff current
VGS=10V, VDS=0V
- -1
VTH Gate threshold Voltage
VDS=12V, IDS=1mA
1.4 1.7 2.4
Pout1
D1
Pout2
D2
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
f=175MHz , VDD=7.2V
Pin=0.3W,Idq=700mA
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA
VDD=9.2V,Po=7W(Pin Control)
f=175MHz,Idq=700mA,Zg=50
Load VSWR=20:1(All Phase)
78
55 60
78
50 55
-
-
-
-
No destroy
Load VSWR tolerance
VDD=9.2V,Po=7W(Pin Control)
f=520MHz,Idq=750mA,Zg=50
Load VSWR=20:1(All Phase)
No destroy
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
W
%
-
-
Publication Date : Oct.2011
2
Datasheet pdf - http://www.DataSheet4U.co.kr/




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RD07MVS1B mosfet

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