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RD70HHF1 반도체 회로 부품 판매점

Silicon MOSFET Power Transistor



Mitsubishi 로고
Mitsubishi
RD70HHF1 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HHF1
Silicon MOSFET Power Transistor 30MHz,70W
DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
3
5.0+/-0.3
18.5+/-0.3
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
ID Drain current
Zg=Zl=50
-
Tch Channel Temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
www.DataSheet.net/
50
+/-20
150
5
20
175
-40 to +175
1.0
UNIT
V
V
W
W
A
°C
°C
°C/W
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current VGS=10V, VDS=0V
--1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.5 - 4.5
Pout Output power
f=30MHz ,VDD=12.5V
70 80
-
ηD Drain efficiency
Pin=3.5W,Idq=1.0A
55 60
-
Load VSWR tolerance
VDD=15.2V,Po=70W(Pin Control)
No destroy
f=30MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD70HHF1
MITSUBISHI ELECTRIC
1/7
REV.5 2 APRIL. 2004
Datasheet pdf - http://www.DataSheet4U.co.kr/


RD70HHF1 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HHF1
Silicon MOSFET Power Transistor 30MHz,70W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
200 AMBIENT TEMPERATURE
160
120
80
40
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
4
2
0
01234567
Vgs(V)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
Vgs=6V
6 Vgs=5.7V
4 Vgs=5.4V
Vgs=5.1V
2
Vgs=4.8V
Vgs=4.5V
0 Vgs=4.2V
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
300
250
Ta=+25°C
f=1MHz
www.DataSheet.net/
200
150
100
50
0
0 10 20 30
Vds(V)
Vds VS. Coss CHARACTERISTICS
500
400
Ta=+25°C
f=1MHz
300
200
100
0
0 10 20 30
Vds(V)
Vds VS. Crss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
10
0
0 10 20 30
Vds(V)
RD70HHF1
MITSUBISHI ELECTRIC
2/7
REV.5 2 APRIL. 2004
Datasheet pdf - http://www.DataSheet4U.co.kr/




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RD70HHF1 mosfet

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Silicon MOSFET Power Transistor - Mitsubishi