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PDF RJP30K3DPP-M0 Data sheet ( Hoja de datos )
| Número de pieza | RJP30K3DPP-M0 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RJP30K3DPP-M0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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RJP30K3DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage VCE(sat) = 1.1V typ
High speed switching tr = 90 ns typ, tf = 250 ns typ
Low leak current ICES = 1 A max
Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0501EJ0100
Rev.1.00
Jul 05, 2011
C
1
23
1. Gate
2. Collector
G 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
www.DataSheet.co.kr
Symbol
VCES
VGES
IC
ic(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
40
300
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
R07DS0501EJ0100 Rev.1.00
Jul 05, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJP30K3DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
3
1 D=1
0.5
Tc = 25°C
0.3 0.2
0.1
0.1
0.05
0.03 0.02
0.01
0.01
1 shot
pulse
0.003
θj – c(t) = γs(t) • θj – c
θj – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
0.001
10 μ
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Preliminary
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin 10%
90%
90%
www.DataSheet.co.kr
Ic
td(on)
10%
tr
ton
td(off)
toff
10%
tf
R07DS0501EJ0100 Rev.1.00
Jul 05, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJP30K3DPP-M0.PDF ] | |
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