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Renesas |
RJP30E2DPK-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
• Trench gate technology (G5H series)
• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
• High speed switching tf = 150 ns typ
• Low leak current ICES = 1 μA max
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
1
23
G
Preliminary Datasheet
R07DS0348EJ0100
Rev.1.00
Apr 12, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tc = 25°C
www.DataSheet.co.kr
Symbol
VCES
VGES
Ic
ic(peak) Note1
PC Note2
θj-c
Tj
Tstg
Ratings
360
±30
35
200
50
2.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
RJP30E2DPK-M0
Electrical Characteristics
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Notes: 3. Pulse test.
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Min
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
Preliminary
Typ
—
—
—
1.7
1160
60
26
34
6
10
0.03
0.1
0.08
0.15
Max
1
±100
5
2.2
—
—
—
—
—
—
—
—
—
—
Unit
μA
nA
V
V
pF
pF
pF
nC
nC
nC
μs
μs
μs
μs
(Ta = 25°C)
Test Conditions
VCE = 360 V, VGE = 0
VGE = ± 30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 35 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 150 V
IC = 35 A
IC = 35 A
RL = 4.5 Ω
VGE = 15 V
RG = 5 Ω
www.DataSheet.co.kr
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
Page 2 of 6
Datasheet pdf - http://www.DataSheet4U.net/
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