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PDF 5HB03N8 Data sheet ( Hoja de datos )
| Número de pieza | 5HB03N8 | |
| Descripción | 30V SO8 Complementary enhancementmode MOSFET H-Bridge | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
5HB03N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS
N-CH
30V
P-CH
-30V
QG
9.0nC
RDS(on)
25mΩ @ VGS= 10V
ID
TA= 25°C
5.0A
45mΩ @ VGS= 4.5V
3.9A
12.7nC
50mΩ @ VGS= -10V
75mΩ @ VGS= -4.5V
-4.1A
-3.3A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
• 2 x N + 2 x P channels in a SOIC package
• Low voltage (VGS = 4.5 V) gate drive
Applications
• DC Motor control
• DC-AC Inverters
P1G
P1D/N1D
N1G
P1S/P2S
N1S/N2S
P2G
P2D/N2D
N2G
Ordering information
Device
Reel size
(inches)
5HB03N8
13
Tape width Quantity
(mm)
per reel
12 2,500
Device marking
WFS
5HB03N8
Issue 1.0 - April 2010
1
1 page  
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
N-channel typical characteristics
5HB03N8
10V
4.5V
V
GS
10 4V
3.5V
1
3V
0.1
T = 25°C
2.5V
0.01
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
1
0.1
10V 4.5V
V
4V GS
3.5V
3V
2.5V
2V
0.01
0.1 1
10
V Drain-Source Voltage (V)
DS
Output Characteristics
10
V = 10V
DS
1 T = 150°C
1.6
V = 10V
GS
I = 5A
1.4 D
R
DS(on)
1.2
1.0
0.1 0.8 V
GS(th)
T = 25°C
V =V
0.6 GS DS
I = 250uA
D
0.01 0.4
2 3 4 -50 0 50 100 150
V Gate-Source Voltage (V)
Tj Junction Temperature (°C)
GS
Typical Transfer Characteristics
Normalised Curves v Temperature
1000
100
2.5V
T = 25°C
V
GS
3V
10
3.5V
1 4V
4.5V
0.1
10V
0.01
0.01
0.1
1
10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
0.1
0.01
T = 25°C
1E-3
0.2 0.4 0.6 0.8
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
1.0
Issue 1.0 - April 2010
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 5HB03N8.PDF ] | |
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