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PDF RAF040P01 Data sheet ( Hoja de datos )
| Número de pieza | RAF040P01 | |
| Descripción | Drive Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
1.5V Drive Pch MOSFET
RAF040P01
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Low voltage drive(1.5V drive).
3) Small surface mount package(TUMT3).
Application
Switching
Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : SF
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RAF040P01
Taping
TCL
3000
www.DataSheet.co.kr
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
12
VGSS
0to8
ID 4
IDP *1
IS
16
0.6
ISP *1
16
PD *2
0.8
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
∗2
∗1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
156
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RAF040P01
Data Sheet
Fig.13 Dynamic Input Characteristics
5
Ta=25°C
VDD=-6V
ID=-4A
4 Pulsed
3
2
1
0
0 10 20 30 40 50
Total Gate Charge : -Qg [nC]
10000
Fig.14 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C
f=1MHz
VGS=0V
Ciss
1000
Coss
100
0.01
Crss
0.1 1 10
Drain-Source Voltage : -VDS [V]
100
www.DataSheet.co.kr
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RAF040P01.PDF ] | |
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