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PDF SQ3456BEV Data sheet ( Hoja de datos )
| Número de pieza | SQ3456BEV | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ3456BEV
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TSOP-6
Top V iew
16
3 mm
25
34
30
0.035
0.052
7.8
Single
(1, 2, 5, 6) D
(3) G
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualifiedc
2.85 mm
Marking Code: 8Lxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
(4) S
N-Channel MOSFET
TSOP-6
SQ3456BEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
30
± 20
7.8
4.5
5
31
10
5
4
1.3
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
110
38
UNIT
°C/W
Document Number: 67934
S11-0959-Rev. A, 06-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
SQ3456BEV
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10
100 μs
1
Limited by RDS(on)*
1 ms
10 ms
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
100 ms
1s, 10s, DC
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 67934
S11-0959-Rev. A, 06-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SQ3456BEV.PDF ] | |
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