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SQ3442EV 반도체 회로 부품 판매점

Automotive N-Channel MOSFET



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Vishay
SQ3442EV 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
www.vishay.com
SQ3442EV
Vishay Siliconix
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 4.5 V
RDS(on) () at VGS = 2.5 V
ID (A)
Configuration
TSOP-6
Top V iew
20
0.055
0.085
4.3
Single
(1, 2, 5, 6) D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
16
3 mm
25
34
(3) G
2.85 mm
Marking Code: 8Fxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
(4) S
N-Channel MOSFET
TSOP-6
SQ3442EV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
20
±8
4.3
2.5
2.2
17
6
1.8
1.7
0.6
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
120
85
UNIT
°C/W
S11-2124-Rev. C, 07-Nov-11
1
Document Number: 65049
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/


SQ3442EV 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
www.vishay.com
SQ3442EV
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 8 V
VGS = 0 V
VDS = 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = 4.5 V
VDS = 20 V, TJ = 125 °C
VDS = 20 V, TJ = 175 °C
VDS5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V
VGS = 4.5 V
VGS = 4.5 V
ID = 4 A
ID = 4 A, TJ = 125 °C
ID = 4 A, TJ = 175 °C
Forward Transconductanceb
Dynamicb
VGS = 2.5 V
ID = 3.4 A
gfs VDS = 15 V, ID = 4 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 10 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = 4.5 V
VDS = 10 V, ID = 4 A
f = 1 MHz
VDD = 10 V, RL = 10
ID 1 A, VGEN = 4.5 V, Rg = 1
Pulsed Currenta
ISM
Forward Voltage
VSD IF = 1.6 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
20
0.6
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
0.9
-
-
-
-
-
-
TYP. MAX. UNIT
-
1
-
-
-
-
-
0.044
-
-
0.060
14
-
1.6
± 100
1
50
150
-
0.055
0.080
0.094
0.085
-
V
nA
μA
A
S
323 405
71 90
45 60
3.5 5.5
0.6 -
0.8 -
1.85 2.8
58
15 23
14 21
69
pF
nC
ns
- 17
0.75 1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2124-Rev. C, 07-Nov-11
2
Document Number: 65049
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




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