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PDF SQ2360EES Data sheet ( Hoja de datos )
| Número de pieza | SQ2360EES | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ2360EES
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-236
(SOT-23)
60
0.085
0.130
4.4
Single
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Typical ESD Protection 800 V
• Compliant to RoHS Directive 2002/95/EC
G1
S2
3D
G
Top View
SQ2360EES
Marking Code: 8Mxxx
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
SQ2360EES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
60
± 20
4.4
2.5
3.7
17
6
1.8
3
1
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
166
50
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S11-2111-Rev. E, 07-Nov-11
1
Document Number: 65352
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
www.vishay.com
SQ2360EES
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
ID = 1 mA
76
72
68
64
60
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain-Source Breakdown vs. Junction Temperature
10
Limited by RDS(on)*
1
IDM Limited
100 μs
1 ms
10 ms
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
100 ms
1s
10 s, DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - T A = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
S11-2111-Rev. E, 07-Nov-11
5
Document Number: 65352
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQ2360EES.PDF ] | |
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