SQ1431EH 반도체 회로 부품 판매점
Automotive P-Channel MOSFET
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 Vishay |
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SQ1431EH
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
ID (A)
Configuration
- 30
0.175
0.300
-3
Single
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedc
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
9E XX
Lot Traceability
and Date Code
Part # Code
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SC-70
SQ1431EH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 30
± 20
-3
- 1.8
- 3.7
- 12
-6
1.8
3
1
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
130
50
UNIT
°C/W
S11-2128 Rev. B, 31-Oct-11
1
Document Number: 67048
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
www.vishay.com
SQ1431EH
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
VDS = VGS, ID = - 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = - 30 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = - 10 V
VDS = - 30 V, TJ = 125 °C
VDS = - 30 V, TJ = 175 °C
VDS- 5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 10 V
VGS = - 10 V
ID = - 2 A
ID = - 2 A, TJ = 125 °C
ID = - 2 A, TJ = 175 °C
Forward Transconductanceb
Dynamicb
VGS = - 4.5 V
ID = - 1.6 A
gfs VDS = - 10 V, ID = - 2 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = - 25 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Crss
Qg
Qgs VGS = - 4.5 V VDS = - 15 V, ID = - 2.2 A
Qgd
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VDD = - 15 V, RL = 15
ID - 1 A, VGEN = - 10 V, Rg = 1
Pulsed Currenta
ISM
Forward Voltage
VSD IF = - 1.2 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
- 30
-1
-
-
-
-
-5
-
-
-
-
-
-
-
-
-
-
-
6.5
-
-
-
-
-
-
TYP. MAX. UNIT
-
- 1.5
-
-
-
-
-
0.125
-
-
0.230
3
-
-2
± 100
-1
- 50
- 150
-
0.175
0.252
0.294
0.300
-
V
nA
μA
A
S
164 205
44 55
28 35
4.2 6.5
0.7 -
1-
12.5 18.5
58
8 12
11 17
8 12
pF
nC
ns
-
- 0.85
- 12
- 1.2
A
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2128 Rev. B, 31-Oct-11
2
Document Number: 67048
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
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SQ1431EH mosfet
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