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Sanyo Semicon Device |
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Ordering number : ENA1769
WPB4002
SANYO Semiconductors
DATA SHEET
WPB4002
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• Reverse recovery time trr=115ns (typ)
• Input capacitance Ciss=2200pF (typ)
• ON-resistance RDS(on)=0.28Ω (typ)
• 10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Source-to-Drain Diode Forward Current (DC)
Source-to-Drain Diode Forward Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
ISD
ISDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
EAS
IAV
Note :*1 VDD=99V, L=1mH, IAV=17A (Fig.1)
*2 L≤1mH, single pulse
Package Dimensions
unit : mm (typ)
7503-004
15.6
14.0 3.2
4.8
2.0
Conditions
PW≤10μs, duty cycle≤1%
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
600
±30
23
80
23
80
2.5
220
150
--55 to +150
172
17
Unit
V
V
A
A
A
A
W
W
°C
°C
mJ
A
Product & Package Information
• Package
: TO-3PB
• JEITA, JEDEC
: SC-65, TO-247, SOT199
• Minimum Packing Quantity : 100 pcs. / tray
Marking
1.6
2.0
1.0
1 23
0.6
5.45 5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
PB4002
LOT No.
http://semicon.sanyo.com/en/network
60910QB TK IM TC-00002373 No. A1769-1/5
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WPB4002
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=11.5A
ID=11.5A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See Fig.2
See Fig.2
See Fig.2
See Fig.2
VDS=200V, VGS=10V, ID=23A
VDS=200V, VGS=10V, ID=23A
VDS=200V, VGS=10V, ID=23A
IS=23A, VGS=0V
See Fig.3
ISD=23A, VGS=0V, di/dt=100A/μs
min
600
Ratings
typ
3
7.5 15
0.28
2200
400
83
42
130
234
84
84
15.2
45.4
1.1
115
340
max
100
±100
5
0.36
1.5
Unit
V
μA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
≥50Ω
RG G
D
L
S WPB4002
10V
0V
50Ω
VDD
Fig.2 Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤0.5%
G
VDD=200V
ID=11.5A
RL=17.3Ω
D VOUT
WPB4002
P.G RGS=50Ω S
Fig.3 trr Reverse Recovery Resistance Test Circuit
WPB4002 D
G
S
500μH
VDD=50V
Driver MOSFET
No. A1769-2/5
Datasheet pdf - http://www.DataSheet4U.net/
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