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VEC2904 반도체 회로 부품 판매점

P-Channel Silicon MOSFET



Sanyo Semicon Device 로고
Sanyo Semicon Device
VEC2904 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
Ordering number : ENA1158
VEC2904
SANYO Semiconductors
DATA SHEET
VEC2904
PNP Epitaxial Planar Silicon Transistor
P-Channel Silicon MOSFET
General-Purpose Switching Device
Features
Applications
Composite type, facilitating high-density mounting.
Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Collector Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Marking : AH
Symbol
VCBO
VCEO
VECO
VEBO
IC
ICP
IB
PC
Tj
Tstg
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
When mounted on ceramic substrate (900mm20.8mm) 1unit
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm20.8mm) 1unit
Ratings
--30
--30
--6.5
--5
--3
--5
--600
1.1
150
--55 to +150
--12
±8
--4
--16
1.1
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
°C
°C
V
V
A
A
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40908PE TI IM TC-00001144 No. A1158-1/6
Datasheet pdf - http://www.DataSheet4U.net/


VEC2904 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
VEC2904
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB=--30V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--500mA
VCE=--10V, IC=--500mA
VCB=--10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
IC=--1.5A, IB=--30mA
IC=--1.5A, IB=--75mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
VBE(sat)
V(BR)CBO
V(BR)CEO
IC=--1.5A, IB=--30mA
IC=--10μA, IE=0A
IC=--1mA, RBE=
Emitter-to-Collector Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V(BR)ECO IC=--10μA, RCB=
V(BR)EBO IE=--10μA, IC=0A
Turn-ON Time
Storage Time
ton See specified Test Circuit.
tstg See specified Test Circuit.
Fall Time
[FET]
tf See specified Test Circuit.
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=--1mA, VGS=0V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
IDSS
IGSS
VDS=--12V, VGS=0V
VGS=±6.4V, VDS=0V
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
VDS=--6V, ID=--1mA
VDS=--6V, ID=--2A
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.3A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
Reverse Transfer Capacitance
Turn-ON Delay Time
Crss
td(on)
VDS=--6V, f=1MHz
See specified Test Circuit.
Rise Time
Turn-OFF Delay Time
Fall Time
tr
td(off)
tf
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Total Gate Charge
Gate-to-Source Charge
Qg VDS=--6V, VGS=--4.5V, ID=--4A
Qgs VDS=--6V, VGS=--4.5V, ID=--4A
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgd
VSD
VDS=--6V, VGS=--4.5V, ID=--4A
IS=--4A, VGS=0V
Note : The specifications shown above are for each individual transistor.
Ratings
min typ max
Unit
200
380
25
--160
--110
--0.83
--30
--30
--6.5
--5
50
270
25
--0.1
--0.1
560
--235
--160
--1.2
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
--12
--0.3
4.5 7.6
37
54
76
940
230
180
14
120
97
110
11
1.6
2.8
--0.85
V
--10 μA
±10 μA
--1.0 V
S
49 mΩ
75 mΩ
107 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2 V
Package Dimensions
unit : mm (typ)
7012-010
8 7 65
0.3
0.15
1234
0.65
2.9
1 : Emitter
2 : Base
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Collector
8 : Collector
SANYO : VEC8
Electrical Connection
8765
1234
1 : Emitter
2 : Base
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Collector
8 : Collector
Top view
No. A1158-2/6
Datasheet pdf - http://www.DataSheet4U.net/




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