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Sanyo Semicon Device |
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Ordering number : ENA0536
VEC2819
SANYO Semiconductors
DATA SHEET
VEC2819
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• DC / DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
• Low ON-resistance
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Low switching noise.
• Low leakage current and high reliability due to planar structure.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Marking : CT
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
Ratings
Unit
--20
±10
--3.5
--14
1.0
150
--55 to +125
V
V
A
A
W
°C
°C
30 V
30 V
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13107PE TI IM TC-00000472 No. A0536-1/6
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
VEC2819
Continued from preceding page.
Parameter
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
50Hz sine wave, 1 cycle
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.3A, VGS=--1.8V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3.5A
VDS=--10V, VGS=--4.5V, ID=--3.5A
VDS=--10V, VGS=--4.5V, ID=--3.5A
IS=--3.5A, VGS=0V
IR=200µA
IF=1A
IF=2A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Ratings
2
10
--55 to +125
--55 to +125
Unit
A
A
°C
°C
Ratings
min typ max
Unit
--20
--0.4
3.5 5.8
55
77
112
680
115
80
12
57
68
58
8.7
1.5
1.8
--0.83
V
--1 µA
±10 µA
--1.4 V
S
72 mΩ
108 mΩ
168 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2 V
30 V
0.4
0.45
V
0.45
0.5 V
30 µA
75 pF
20 ns
Package Dimensions
unit : mm (typ)
7012-005
8 7 65
0.3
0.15
1234
0.65
2.9
1 : Anode
2 : No Contact
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Cathode
8 : Cathode
SANYO : VEC8
Electrical Connection
87 6
5
1234
1 : Anode
2 : No Contact
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Cathode
8 : Cathode
Top view
No. A0536-2/6
Datasheet pdf - http://www.DataSheet4U.net/
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