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VEC2616 반도체 회로 부품 판매점

N-Channel and P-Channel Silicon MOSFETs



Sanyo Semicon Device 로고
Sanyo Semicon Device
VEC2616 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
Ordering number : ENA1822
VEC2616
SANYO Semiconductors
DATA SHEET
VEC2616
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
ON-resistance Nch: RDS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.)
4V drive
N-channel MOSFET + P-channel MOSFET
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel
60 --60
±20 ±20
3 --2.5
12 --10
0.9
1.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7012-002
8 7 65
0.3
0.15
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1234
0.65
2.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
UP
Lot No.
TL
Electrical Connection
87 6 5
1234
http://semicon.sanyo.com/en/network
91510PE TK IM TC-00002461 No. A1822-1/6
Datasheet pdf - http://www.DataSheet4U.net/


VEC2616 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
VEC2616
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.75A, VGS=4.5V
ID=0.75A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
IS=3A, VGS=0V
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
ID=--1.5A, VGS=--10V
ID=--0.75A, VGS=--4.5V
ID=--0.75A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=--30V, VGS=--10V, ID=--2.5A
VDS=--30V, VGS=--10V, ID=--2.5A
VDS=--30V, VGS=--10V, ID=--2.5A
IS=--2.5A, VGS=0V
Ratings
min typ max
Unit
60
1.2
2.6
62
76
83
505
57
37
7.3
7.5
41
22
10
1.6
2.1
0.81
V
1 μA
±10 μA
2.6 V
S
80 mΩ
106 mΩ
116 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
--60
--1.2
3.9
105
128
138
420
54
44
6.4
9.8
65
36
11
1.4
2
--0.83
--1
±10
--2.6
137
180
194
--1.2
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No. A1822-2/6
Datasheet pdf - http://www.DataSheet4U.net/




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