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VEC2603 반도체 회로 부품 판매점

N-Channel and P-Channel Silicon MOSFETs



Sanyo Semicon Device 로고
Sanyo Semicon Device
VEC2603 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
Ordering number : ENA0934
VEC2603
SANYO Semiconductors
DATA SHEET
VEC2603
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving
P-channel MOSFET enables high-density mounting.
Best suited for load switches.
1.8V drive.
0.75mm mount high.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm)1unit
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : BF
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=80mA
N-channel
P-channel
30 --12
±10 ±8
0.15 --4
0.6 --16
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
0.4 1.3 V
0.15
0.22
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91207PE TI IM TC-00000866 No. A0934-1/6
Datasheet pdf - http://www.DataSheet4U.net/


VEC2603 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
VEC2603
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Conditions
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0V
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±6.4V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--2A
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.3A, VGS=--1.8V
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
VDS=--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--4A
VDS=--6V, VGS=--4.5V, ID=--4A
VDS=--6V, VGS=--4.5V, ID=--4A
IS=--4A, VGS=0V
Ratings
min typ max
Unit
2.9 3.7
3.7 5.2
6.4
12.8
7.0 pF
5.9 pF
2.3 pF
19 ns
65 ns
155 ns
120 ns
1.58
nC
0.26
nC
0.31
nC
0.87
1.2 V
--12
--0.3
4.5 7.6
40
57
78
940
230
180
14
120
97
110
11
1.6
2.8
--0.85
V
--10 µA
±10 µA
--1.0 V
S
53 m
80 m
112 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.5 V
Package Dimensions
unit : mm (typ)
7012-009
8 7 65
0.3
0.15
1234
0.65
2.9
1 : Source1
2 : Gate1
3 : Drain2
4 : Drain2
5 : Source2
6 : Gate2
7 : Drain1
8 : Drain1
SANYO : VEC8
Electrical Connection
87 6 5
1234
1 : Source1
2 : Gate1
3 : Drain2
4 : Drain2
5 : Source2
6 : Gate2
7 : Drain1
8 : Drain1
Top view
No. A0934-2/6
Datasheet pdf - http://www.DataSheet4U.net/




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