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VEC2602 반도체 회로 부품 판매점

N-Channel Silicon MOSFET



Sanyo Semicon Device 로고
Sanyo Semicon Device
VEC2602 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
Ordering number : ENN8021
VEC2602
VEC2602
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Best suited for inverter applications.
The VEC2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
thereby enabling high-density mounting.
4V drive.
Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Mounted on a ceramic board (900mm2!0.8mm)
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : BE
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
N-channel
P-channel
30 --30
±20 ±20
4 --3
16 --12
0.9
1.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
1.0 2.4 V
2.2 3.6
S
37 48 m
70 99 m
370 pF
85 pF
47 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1004PE TS IM TB-00000135 No.8021-1/6
Datasheet pdf - http://www.DataSheet4U.net/


VEC2602 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
VEC2602
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=4A
VDS=10V, VGS=10V, ID=4A
VDS=10V, VGS=10V, ID=4A
IS=4A, VGS=0
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
ID=--1.5A, VGS=--10V
ID=--0.7A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--3A
VDS=--10V, VGS=--10V, ID=--3A
VDS=--10V, VGS=--10V, ID=--3A
IS=--3A, VGS=0
Ratings
min typ max
Unit
11 ns
28 ns
37 ns
34 ns
8.5 nC
1.8 nC
1.3 nC
0.83
1.2 V
--30
--1.0
2.0 3.4
65
117
510
115
78
11
17
53
35
11
2.4
1.7
--0.87
V
--1 µA
±10 µA
--2.4 V
S
86 m
168 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2 V
Package Dimensions
unit : mm
2227A
8 7 65
0.3
0.15
1234
0.65
2.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
Electrical Connection
87 6 5
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
No.8021-2/6
Datasheet pdf - http://www.DataSheet4U.net/




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VEC2602 mosfet

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