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NK9410
NANKER
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 20V/6.0A
RDS(ON)=40m. (Typ.) @ VGS=4.5V,ID=6A
RDS(ON)=45m.(Typ.) @ VGS=2.5V,ID=5.2A
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SOP-8 Package
Applications
DDDD
8 7 65
1 234
S SS G
Top View of SOP-8
Power Management in Notebook Computer
Portable Equipment and Battery Powered
Systems.
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Static
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-State
Resistance
VSD Diode Forward Voltage
Test Condition
VGS=0V , ID=250µA
VDS=12V , VGS=0V
VDS=VGS , IDS=250µA
VGS=±8V , VDS=0V
VGS=4.5V , IDS=6A
VGS=2.5V , IDS=5.2A
ISD=1.5A , VGS=0V
NK9410
Min. Typ. Max.
Unit
16 V
1 µA
0.4 1.3 V
±100 nA
40 50
mΩ
45 55
1.2
V
Absolute Maximum Ratings A 25unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID* Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Rating
20
±8
6
20
Unit
V
A
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