파트넘버.co.kr H50N03E 데이터시트 PDF


H50N03E 반도체 회로 부품 판매점

N-Channel Enhancement-Mode MOSFET



Hi-Sincerity Mocroelectronics 로고
Hi-Sincerity Mocroelectronics
H50N03E 데이터시트, 핀배열, 회로
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200519
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 1/5
H50N03E
N-Channel Enhancement-Mode MOSFET (25V, 50A)
Features
RDS(on)=11m@VGS=10V, ID=30A
RDS(on)=18m@VGS=4.5V, ID=30A
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for DC/DC Converters and Motor Drivers
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
H50N03E Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
Internal Schematic
Diagram
G
D
S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Maximum Power Dissipation @ TC=25oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=35A, VDD=20V, L=0.14mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board
VDS
VGS
ID
IDM
PD
TJ,Tstg
EAS
RθJC
RθJA
Value
25
±20
50
200
70
-55 to 150
300
2.1
55
Units
V
V
A
A
W
oC
mJ
OC/W
OC/W
Switching
Test Circuit
VDD
VGEN
VIN
RG G
D
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50% 50%
Pulse Width
H50N03E
HSMC Product Specification


H50N03E 데이터시트, 핀배열, 회로
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200519
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 2/5
ELectrical Characteristics
Characteristic
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
NOTE: Pulse Test: Pulse Width 300us, Duty Cycle2%
Symbol
Test Condition
Min. Typ. Max. Unit
BVDSS
RDS(on)
VGS(th)
IDSS
IGSS
Rg
gfs
VGS=0V, ID=250uA
VGS=4.5V, ID=30A
VGS=10V, ID=30A
VDS=VGS, ID=250uA
VDS=24V, VGS=0V
VGS=±20V, VDS=0V
VDS=0V, VGS=1V at 1MHz
VDS=10V, ID=35A
25 - - V
- - 18
m
- - 11
1 1.6 3
V
- - 1 uA
- - ±100 nA
- 1 -
- 6 -S
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=15V, ID=35A, VGS=10V
VDD=15V, RL=15, ID=1A
VGEN=10V, RG=24
VDS=15V, VGS=0V, f=1MHz
- 18.4 -
- 3.57 -
- 2.9 -
- 11.7 -
- 3.87 -
- 32.13 -
- 5.4 -
- 1176.3 -
- 268.43 -
- 142.67 -
nC
nS
pF
IS
VSD IS=20A, VGS=0V
- - 35 A
- 0.87 1.5 V
H50N03E
HSMC Product Specification




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Hi-Sincerity Mocroelectronics

( hsm )

H50N03E mosfet

데이터시트 다운로드
:

[ H50N03E.PDF ]

[ H50N03E 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


H50N03E

N-Channel Enhancement-Mode MOSFET - Hi-Sincerity Mocroelectronics



H50N03J

N-Channel Enhancement-Mode MOSFET - Hi-Sincerity Mocroelectronics



H50N03U

N-Channel Enhancement-Mode MOSFET - Hi-Sincerity Mocroelectronics