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IXYS Corporation |
Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DE275-501N16A
RF Power MOSFET
Preliminary Data Sheet
VDSS
ID25
RDS(on)
=
=
=
500 V
16 A
.5 Ω
Symbol Test Conditions
Maximum Ratings
PDHS = 375 W
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS
PDAMB
RthJHS
TJ
TJM
Tstg
TL
Weight
Symbol
TJ = 25°C to 150°C
500 V
TJ = 25°C to 150°C; RGS = 1 MΩ
500 V
Continuous
±20 V
Transient
±30 V
Tc = 25°C
16 A
Tc = 25°C, pulse width limited by TJM
98 A
Tc = 25°C
Tc = 25°C
16 A
20 mJ GATE
DRAIN
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C
Derate 3.0W/°C above 25°C
Tc = 25°C
1.6mm (0.063 in) from case for 10 s
5 V/ns
>200 V/ns
375 W
3.0
0.33
-55…+150
150
-55…+150
300
2
W
K/W
°C
°C
°C
°C
g
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
VDSS
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 4 ma
IGSS
VGS = ±20 VDC, VDS = 0
www.DataSheet4U.com
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
min.
500
2.5
typ.
max.
V
5.5 V
±100 nA
50 µA
1 mA
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
.5 Ω
gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 6
S
Directed Energy, Inc.
An IXYS Company
DE275-501N16A
RF Power MOSFET
Symbol Test Conditions
RG
Ciss
Coss
Crss
Td(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
0.3 Ω
1800
pF
150 pF
45 pF
3 ns
2 ns
4 ns
5 ns
50 nC
20 nC
30 nC
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions
min.
typ. max.
IS
ISM
VSD
Trr
QRM
IRM
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
IF = IS, -di/dt = 100A/µs,
VR = 100V
6A
48 A
1.5 V
200 ns
0.6 µC
4A
www.DataSheet4U.com
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
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