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Unisonic Technologies |
6N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
6 Amps, 400 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N40 is an N-Channel enhancement mode Power
FET using UTC’s perfect planar stripe, DMOS technology to
provide customers with superior switching performance and
minimum on-state resistance. It also can withstand high energy
pulse in the avalanche and commutation mode.
The UTC 6N40 is generally used in applications , such as
electronic lamp ballasts based on half bridge topology and high
efficiency switched mode power supplies.
FEATURES
* 6A, 400V, RDS(ON)=1.0Ω @ VGS=10V
* Fast switching speed
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N40L-TF3-T
6N40G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-487.a
6N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400 V
Gate-Source Voltage
VGSS
±30 V
Avalanche Current (Note 1)
Drain Current
Continuous
Pulsed (Note 1)
IAR
ID
IDM
6
6 (Note 6)
24(Note 6)
A
A
A
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
EAR
270 mJ
7.3 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
Power Dissipation
Junction Temperature
PD 38 W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.31
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-487.a
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